NDB710A Fairchild Semiconductor, NDB710A Datasheet
NDB710A
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NDB710A Summary of contents
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... NDP710A / NDP710AE / NDP710B / NDP710BE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially ...
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... ALL -100 ALL 2 2.9 4 1.4 2.2 3.6 NDP710A 0.026 0.038 NDP710AE NDB710A NDB710AE 0.044 0.08 NDP710B 0.042 NDP710BE NDB710B 0.09 NDB710BE NDP710A 42 NDP710AE NDB710A NDB710AE NDP710B 40 NDP710BE NDB710B NDB710BE ALL 20 28 ALL 2840 3600 ALL 550 700 ALL 175 200 NDP710.SAM Units µ ...
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... I rr THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case R JC Thermal Resistance, Junction-to-Ambient R JA Notes: 1. NDP710A/710B and NDB710A/710B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0 25°C unless otherwise noted) C Conditions (Note ...
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Typical Electrical Characteristics 120 V = 20V 100 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 2 15A 10V GS ...
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Typical Electrical Characteristics 1. 250µA D 1.1 1.05 1 0.95 0.9 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature. 6000 3000 2000 1000 300 ...
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Typical Electrical Characteristics 10V -55°C J 25°C 30 125° DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain Current and Temperature. 300 ...