NDB710A Fairchild Semiconductor, NDB710A Datasheet - Page 3

• Manufacturer Part Number: NDB710A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS
I
I
V
(Note 2)
t
I
THERMAL CHARACTERISTICS
R
R
Notes:
1. NDP710A/710B and NDB710A/710B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
D(ON)
r
D(OFF)
f
S
SM
rr
rr
SD
g
gs
gd
JC
JA
Parameter
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
Reverse Recovery Current
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 2)
(T
C
Conditions
V
V
V
I
V
V
dI
D
I
= 25°C unless otherwise noted)
S
DD
GS
DS
GS
GS
S
= 42 A, V
/dt = 100 A/µs
= 21 A
= 80 V,
= 50 V, I
= 10 V, R
= 0 V,
= 0 V, I
S
GS
D
= 42 A,
GEN
= 42 A,
= 10V
= 5
T
J
= 125°C
NDP710AE
NDB710AE
NDP710BE
NDB710BE
NDP710AE
NDB710AE
NDP710BE
NDB710BE
NDP710A
NDB710A
NDP710B
NDB710B
NDP710A
NDB710A
NDP710B
NDB710B
Type
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
Min
0.89
0.69
Typ
111
128
8.7
15
55
81
92
15
44
Max
62.5
180
130
130
168
160
180
1.3
1.2
25
90
42
40
13
1
NDP710.SAM
Units
°C/W
°C/W
nC
nC
nC
nS
nS
nS
nS
ns
A
A
A
A
V
V
A