NDH834P Fairchild Semiconductor, NDH834P Datasheet - Page 4

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NDH834P

Manufacturer Part Number
NDH834P
Description
P-channel Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
Typical Electrical Characteristics
-15
-12
-20
-15
-10
-9
-6
-3
Figure 5. Transfer Characteristics.
-5
1.6
1.4
1.2
0.8
0.6
0
-0.5
0
Figure 1. On-Region Characteristics.
Figure 3. On-Resistance Variation with
1
0
-50
V
V
DS
V
GS
I
D
GS
Temperature.
= -5V
= -4.5V
-3.0
= -5.6A
-25
-3.5
= -4.5V
V
-1
V
GS
0
DS
T , JUNCTION TEMPERATURE (°C)
J
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
-2.7
-1
-2.5
2 5
-1.5
T =-55°C
-2.0
5 0
J
7 5
-2
-1.5
25°C
125°C
100
-2
125
-3
-2.5
150
1.5
0.5
2.5
1.5
0.5
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
2
1
0
Figure 6. Gate Threshold Variation with
Figure 2. On-Resistance Variation with Gate
2
1
Figure 4. On-Resistance Variation with Drain
1
0
-50
0
V
GS
V
Temperature.
GS
Voltage and Drain Current.
= -4.5V
Current and Temperature.
-25
= -2.0 V
-5
-5
0
T , JUNCTION TEMPERATURE (°C)
J
I
D
I
D
-2.5
, DRAIN CURRENT (A)
2 5
, DRAIN CURRENT (A)
-2.7
-10
-10
5 0
T = 125°C
-3.0
J
-55°C
25°C
7 5
-3.5
-15
-15
1 0 0
I
D
V
DS
= -250µA
-4.5
NDH834P Rev.C
= V
1 2 5
GS
-20
-20
1 5 0

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