NDH834P Fairchild Semiconductor, NDH834P Datasheet - Page 3

no-image

NDH834P

Manufacturer Part Number
NDH834P
Description
P-channel Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
S
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
SD
design while R
P
Typical R
D
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
t
a. 70
b. 125
c. 135
Scale 1 : 1 on letter size paper
JA
R
T
1a
J
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
JA
T
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
o
CA
A
t
C/W when mounted on a 1 in
o
o
C/W when mounted on a 0.005 in
C/W when mounted on a 0.026 in
is determined by the user's board design.
R
JC
T
J
R
T
A
C A
t
I
2
D
t
2
pad of 2oz copper.
R
(T
DS ON
2
2
pad of 2oz copper.
pad of 2oz copper.
A
= 25°C unless otherwise noted)
T
J
1b
Conditions
V
GS
= 0 V, I
S
= -1.5 A
(Note 2)
1c
Min
Typ
-0.7
JC
Max
-1.5
-1.2
is guaranteed by
NDH834P Rev.C
Units
A
V

Related parts for NDH834P