NDH834P Fairchild Semiconductor, NDH834P Datasheet
NDH834P
Manufacturer Part Number
NDH834P
Description
P-channel Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDH834P.pdf
(8 pages)
____________________________________________________________________________________________
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
Absolute Maximum Ratings
© 1997 Fairchild Semiconductor Corporation
D
J
DSS
GSS
D
qJA
qJC
NDH834P
P-Channel Enhancement Mode Field Effect Transistor
General Description
SuperSOT
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
battery powered circuits or portable electronics where fast
switching, low in-line power loss, and resistance to transients
are needed.
,T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
TM
-8 P-Channel enhancement mode power field
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1a)
(Note 1a)
(Note 1)
(Note 1b)
(Note 1c)
(Note 1a)
Features
-5.6 A, -20 V. R
Proprietary SuperSOT
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
Exceptional on-resistance and maximum DC current
capability.
5
6
7
8
R
NDH834P
-55 to 150
DS(ON)
DS(ON)
-5.6
-20
-15
1.8
0.9
±8
70
20
1
= 0.045
= 0.035
TM
-8 package design using copper
@ V
@ V
GS
GS
4
3
1
2
= -2.7V
= -4.5 V
DS(ON)
NDH834P Rev.C
.
May 1997
.
Units
°C/W
°C/W
W
°C
V
V
A
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NDH834P Summary of contents
Page 1
... V = -4.5 V DS(ON 0.045 @ V = -2.7V . DS(ON package design using copper DS(ON NDH834P -20 ±8 -5.6 -15 1.8 1 0.9 -55 to 150 70 20 NDH834P Rev.C May 1997 . Units °C °C/W °C/W ...
Page 2
... GEN GEN Min Typ Max Units - µ -10 µA 100 nA -100 nA -0.4 -0. -0.3 -0.4 -0.8 0.029 0.035 o 0.039 0.063 C 0.038 0.045 - 1820 pF 745 pF 270 145 280 ns 85 160 ns 9 2.3 nC 1.1 nC NDH834P Rev.C ...
Page 3
... C/W when mounted on a 0.005 in pad of 2oz copper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -1.5 A (Note Min Typ Max Units -1.5 A -0.7 -1 guaranteed NDH834P Rev.C ...
Page 4
... I , DRAIN CURRENT (A) D Voltage and Drain Current. = -4. 125°C J 25°C -55°C -5 -10 - DRAIN CURRENT (A) D Current and Temperature -250µ JUNCTION TEMPERATURE (°C) J Temperature. -20 - NDH834P Rev.C ...
Page 5
... BODY DIODE FORWARD VOLTAGE (V) SD Variation with Current and . Temperature = -5. -5V DS -10V GATE CHARGE (nC off t t d(off PULSE WIDTH -15V INVERTED NDH834P Rev.C ...
Page 6
... COPPER MOUNTING PAD AREA ( -4. See Note 25° 0.2 0 DRAIN-SOURCE VOLTAGE ( ( See Note 1c JA P(pk ( Duty Cycle NDH834P Rev.C ...
Page 7
... NDH834P Rev.C ...
Page 8
... NDH834P Rev.C ...