FDMA905P Fairchild Semiconductor, FDMA905P Datasheet - Page 2

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FDMA905P

Manufacturer Part Number
FDMA905P
Description
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications
Manufacturer
Fairchild Semiconductor
Datasheet

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©2011 Fairchild Semiconductor Corporation
FDMA905P Rev.C1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
.
BV
ΔBV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
iss
oss
rss
SD
ΔT
ΔT
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a. 52 °C/W when mounted on
T
2
a 1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25°C unless otherwise noted
2
pad of 2 oz copper.
V
I
V
V
V
V
V
V
V
I
V
f = 1 MHz
V
V
I
I
V
V
D
V
V
F
D
D
GS
GS
GS
GS
GS
DD
GS
GS
DD
GS
DS
DS
GS
DD
GS
= -10 A, di/dt = 100 A/μs
= -250 μA, referenced to 25 °C
= -250 μA, V
= -250 μA, referenced to 25 °C
= -4.5 V, I
= 0 V, I
= 0 V, I
= V
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
= -5 V, I
= -6 V, V
= -6 V, I
= -4.5 V, R
= -9.6 V, V
= ±8 V, V
= -6 V, I
= -4.5 V
DS
2
Test Conditions
, I
S
S
D
D
D
= -10 A
D
= -2 A
GS
D
DS
D
D
D
= -10 A
= -250 μA
= -10 A,
= -10 A,
GS
GS
GEN
= -10 A, T
= -10 A
= -8.9 A
= -4.5 A
= 0 V,
= 0 V
= 0 V
= 0V
= 6 Ω
J
= 125 °C
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
Min
-0.4
-12
2559
Typ
-0.6
-0.8
-4.3
120
-0.7
490
437
6.1
3.5
4.2
2.6
59
21
21
11
11
14
17
21
16
50
±100
Max
3405
192
-1.2
-1.2
θCA
-1.0
735
655
www.fairchildsemi.com
20
20
94
29
34
12
-1
16
21
82
21
is determined by
mV/°C
mV/°C
Units
μA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V

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