FDMA905P Fairchild Semiconductor, FDMA905P Datasheet

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FDMA905P

Manufacturer Part Number
FDMA905P
Description
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications
Manufacturer
Fairchild Semiconductor
Datasheet

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©2011 Fairchild Semiconductor Corporation
FDMA905P Rev.C1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMA905P
Single P-Channel PowerTrench
-12 V, -10 A, 16 mΩ
Features
V
V
I
P
T
R
R
R
D
DS
GS
D
J
θJC
θJA
θJA
Max r
Max r
Max r
Low profile - 0.8 mm maximum - in the new package
MicroFET 2X2 mm
Free from halogenated compounds and antimony oxides
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
Drain
A95
= 16 mΩ at V
= 21 mΩ at V
= 82 mΩ at V
Pin 1
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
MicroFET 2X2 (Bottom View)
D
GS
GS
GS
D
D
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
FDMA905P
-Continuous
-Pulsed
Device
D
S
D
D
D
= -10 A
= -8.9 A
= -4.5 A
G
T
A
= 25°C unless otherwise noted
Parameter
Source
MicroFET 2X2
Package
®
MOSFET
1
General Description
This device is designed specifically for battery charge or load
switching
applications. It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
G
D
D
Reel Size
1
2
3
in
7 ’’
cellular
Bottom Drain Contact
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
handset
Tape Width
8 mm
-55 to +150
and
Ratings
145
-12
-10
-40
6.9
2.4
0.9
±8
52
6
other
5
4
October 2011
D
D
S
www.fairchildsemi.com
3000 units
Quantity
ultraportable
Units
°C/W
°C
W
V
V
A

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FDMA905P Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device A95 FDMA905P ©2011 Fairchild Semiconductor Corporation FDMA905P Rev.C1 ® MOSFET General Description = -10 A This device is designed specifically for battery charge or load D switching = -8 applications. It features a MOSFET with low on-state resistance. ...

Page 2

... Reverse Recovery Charge rr Notes determined with the device mounted θJA the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2 ©2011 Fairchild Semiconductor Corporation FDMA905P Rev. 25°C unless otherwise noted J Test Conditions = -250 μ -250 μ ...

Page 3

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMA905P Rev. °C unless otherwise noted J = -2.5 V μ s 1.0 1 100 125 150 0.01 o ...

Page 4

... Forward Bias Safe Operating Area 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 11. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMA905P Rev. °C unless otherwise noted J 10000 1000 100 100 ...

Page 5

... PIN #1 IDENT 0.33 0.20 6 0.65 A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION MO-229 DATED AUG/2003 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 D. DRAWING FILENAME: MKT-MLP06Lrev2. ©2011 Fairchild Semiconductor Corporation FDMA905P Rev.C1 2.000 2.000 0. RECOMMENDED LAND PATTERN OPT 1 (0.20) C (0.30) 1.000 0.800 ...

Page 6

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMA905P Rev.C1 PDP SPM™ Power-SPM™ ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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