FDMA905P Fairchild Semiconductor, FDMA905P Datasheet - Page 3

• Manufacturer Part Number: FDMA905P
• Description: This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMA905P Rev.C1
Typical Characteristics
1.4
1.2
1.0
0.8
40
30
20
10
40
30
20
10
0
Figure 3. Normalized On- Resistance
Figure 1.
-75
0
0
Figure 5. Transfer Characteristics
0
I
V
D
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
V
= -10 A
-50
GS
GS
vs Junction Temperature
= -4.5 V
-V
= -4.5 V
= -3 V
V
-V
DS
T
DS
-25
GS
J
,
On-Region Characteristics
,
= -5 V
0.5
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
0.5
0
T
V
J
GS
= 150
25
= -1.8 V
V
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
μ
1.0
s
o
C
= -2.5 V
50
T
J
T
= 25 °C unless otherwise noted
1.0
J
75
= -55
T
J
1.5
o
= 25
100 125 150
C )
o
C
o
C
μ
s
1.5
2.0
3
0.001
0.01
100
60
40
20
Figure 2.
0.1
2.5
2.0
1.5
1.0
0.5
10
0
1
1.0
Figure 4.
Forward Voltage vs Source Current
0
0
Figure 6.
Drain Current and Gate Voltage
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
1.5
-V
= 0 V
-V
0.2
Normalized On-Resistance vs
SD
GS
T
, BODY DIODE FORWARD VOLTAGE (V)
On-Resistance vs Gate to
J
, GATE TO SOURCE VOLTAGE (V)
-I
10
Source Voltage
= 150
2.0
Source to Drain Diode
D
,
V
DRAIN CURRENT (A)
GS
0.4
T
T
o
= -1.8 V
J
J
C
= 125
= 25
2.5
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
T
μ
C
0.6
o
20
s
J
C
= -55
V
3.0
GS
T
J
= 25
= -2.5 V
o
I
C
D
0.8
= -10 A
3.5
o
C
30
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V
V
GS
1.0
4.0
GS
= -4.5 V
μ
= -3 V
s
4.5
1.2
40