FDMC8010 Fairchild Semiconductor, FDMC8010 Datasheet - Page 3

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FDMC8010

Manufacturer Part Number
FDMC8010
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2011 Fairchild Semiconductor Corporation
FDMC8010 Rev.C
Typical Characteristics
120
120
1.6
1.4
1.2
1.0
0.8
0.6
80
40
80
40
Figure 3. Normalized On Resistance
0
0
Figure 1.
0.0
-75
1.0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
V
D
-50
GS
vs Junction Temperature
V
= 30 A
DS
V
= 10 V
GS
V
T
= 5 V
V
-25
GS
J
= 3 V
DS
On Region Characteristics
,
1.5
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
,
DRAIN TO SOURCE VOLTAGE (V)
V
0.2
GS
0
V
T
GS
= 3.5 V
J
V
T
= 25
GS
J
= 4 V
V
25
= 150
GS
= 4.5 V
μ
s
o
2.0
= 10 V
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
50
C
T
J
= 25°C unless otherwise noted
0.4
75
2.5
o
100 125 150
T
C )
J
= -55
o
C
μ
s
0.6
3.0
3
0.001
0.01
200
100
5
4
3
2
1
0
0.1
5
4
3
2
1
0
10
Figure 2.
Figure 4.
Forward Voltage vs Source Current
1
0
2
vs Drain Current and Gate Voltage
0.0
Figure 6.
V
V
GS
GS
V
= 3 V
= 0 V
SD
T
0.2
J
V
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
= 150
On-Resistance vs Gate to
GS
I
Source Voltage
D
4
Source to Drain Diode
,
,
T
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
T
J
o
J
40
= 125
C
0.4
= 25
V
V
GS
GS
o
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
C
C
= 3.5 V
= 4.5 V
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
I
D
= 30 A
T
80
0.8
J
= -55
T
J
V
V
8
= 25
GS
GS
o
www.fairchildsemi.com
C
= 10 V
1.0
= 4 V
μ
o
C
s
μ
s
120
1.2
10

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