FDMC8010 Fairchild Semiconductor, FDMC8010 Datasheet - Page 2

• Manufacturer Part Number: FDMC8010
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMC8010 Rev.C
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. E
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
SD
iss
oss
rss
g
ΔT
ΔT
g
g
gs
gd
rr
Symbol
AS
θJA
DSS
GS(th)
DSS
J
J
of 153 mJ is based on starting T
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
= 25
Parameter
°
C, L = 0.3 mH, I
2
T
a. 53 °C/W when mounted on a
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
1 in
= 25 °C unless otherwise noted
2
AS
pad of 2 oz copper.
= 32 A, V
DD
= 27 V, V
V
V
V
V
V
f = 1 MHz
V
I
V
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DD
GS
GS
GS
GS
GS
GS
GS
DS
DS
GS
GS
DS
GS
= 30 A, di/dt = 100 A/μs
= 1 mA, referenced to 25 °C
= 1 mA, V
= 1 mA, referenced to 25 °C
= 15 V, V
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 5 V, I
= 0 V, I
= 0 V, I
= 24 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 20 V, V
GS
2
DS
= 10 V. 100% test at L = 0.1 mH, I
Test Conditions
, I
D
S
S
D
GS
D
D
D
= 30 A
D
= 30 A
= 2 A
GS
GEN
GS
DS
= 1 mA
= 30 A,
= 30 A
= 30A, T
= 25 A
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 30 A
J
= 15 V,
= 125 °C
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
AS
b. 125 °C/W when mounted on a
= 47 A.
minimum pad of 2 oz copper.
Min
1.2
30
4405
1570
167
188
0.6
0.7
0.5
Typ
1.5
0.9
1.3
1.3
7.5
5.3
9.5
49
29
15
40
67
32
10
-5
15
5860
2090
Max
250
1.2
1.2
100
2.5
1.3
1.8
θCA
78
46
27
15
64
94
45
11
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2
1
is determined by
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
μA
nA
nC
nC
nC
nC
ns
Ω
ns
ns
ns
ns
V
V
S
V