FDD86113LZ Fairchild Semiconductor, FDD86113LZ Datasheet - Page 3

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FDD86113LZ

Manufacturer Part Number
FDD86113LZ
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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FDD86113LZ Rev. C
©2011 Fairchild Semiconductor Corporation
Typical Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
15
12
15
12
9
6
3
0
Figure 3. Normalized On-Resistance
9
6
3
0
Figure 1.
-75
0
0
Figure 5. Transfer Characteristics
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
DS
I
V
D
-50
= 10 V
GS
vs Junction Temperature
= 5 V
= 4.2 A
= 10 V
1
V
T
V
1
-25
DS
J
GS
T
On-Region Characteristics
,
J
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
= 150
DRAIN TO SOURCE VOLTAGE (V)
2
0
o
C
2
25
V
μ
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
s
T
3
J
= 4.5 V
T
= -55
50
J
T
= 25
J
3
= 25 °C unless otherwise noted
o
C
75
o
4
C
o
100 125 150
C )
V
V
4
GS
GS
V
5
GS
= 2.5 V
= 3.5 V
μ
= 3 V
s
6
5
3
0.001
0.01
400
300
200
100
0.1
20
10
Figure 2.
Figure 4.
4
3
2
1
0
0
1
0.0
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
Figure 6.
0
2
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
= 0 V
V
V
GS
0.2
SD
T
Normalized On-Resistance
, BODY DIODE FORWARD VOLTAGE (V)
= 2.5 V
V
On-Resistance vs Gate to
3
J
GS
= 150
Source Voltage
I
Source to Drain Diode
D
4
,
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
I
D
0.4
= 4.2 A
o
C
6
V
GS
μ
0.6
s
= 3 V
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
J
= 25
9
T
0.8
J
o
= -55
C
T
J
V
8
= 25
GS
www.fairchildsemi.com
o
T
C
V
12
= 3.5 V
V
J
1.0
GS
GS
= 125
o
C
= 4.5 V
= 10 V
μ
o
s
C
1.2
10
15

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