FDD86113LZ Fairchild Semiconductor, FDD86113LZ Datasheet - Page 2

• Manufacturer Part Number: FDD86113LZ
• Manufacturer: Fairchild Semiconductor

FDD86113LZ Rev. C
©2011 Fairchild Semiconductor Corporation
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. Starting T
4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
Electrical Characteristics
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
iss
oss
rss
g
SD
ΔT
ΔT
g(TOT)
g(TOT)
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
J
= 25 °C, L = 1 mH, I
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
= 5 A, V
Parameter
DD
= 90 V, V
2
a)
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
GS
40 °C/W when mounted on a
1 in
= 25 °C unless otherwise noted
= 10 V.
2
pad of 2 oz copper
V
V
I
I
I
V
V
V
I
V
V
V
V
V
f = 1MHz
V
V
V
V
F
D
D
D
GS
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
GS
GS
= 4.2 A, di/dt = 100 A/μs
= 250 μA, V
= 250 μA, referenced to 25 °C
= 250 μA, referenced to 25 °C
= 0 V, I
= 0 V, I
= 80 V, V
= 5 V, I
= 50 V, V
= 0 V to 10 V
= 0 V to 4.5 V
= ±20 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 50 V, I
= 10 V, R
DS
2
Test Conditions
, I
S
S
D
D
D
= 4.2 A
= 1.7 A
D
D
D
GS
GS
= 4.2 A
GEN
GS
= 4.2 A,
= 250 μA
DS
= 4.2 A
= 3.4 A
= 4.2 A,T
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 4.2 A
J
= 50 V,
= 125 °C
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
Min
100
1
b)
96 °C/W when mounted on a
minimum pad of 2 oz copper
0.88
0.80
Typ
116
142
213
1.5
2.4
1.4
87
3.6
1.3
9.7
1.6
3.7
1.9
0.6
0.7
72
55
31
20
-5
9
Max
285
±10
104
156
170
θCA
1.3
1.2
75
49
33
10
10
20
10
5
1
3
6
3
www.fairchildsemi.com
is determined by
mV/°C
mV/°C
Units
mΩ
μA
μA
nC
pF
pF
pF
nC
nC
nC
ns
Ω
ns
ns
ns
ns
V
V
S
V