FDMS3016DC Fairchild Semiconductor, FDMS3016DC Datasheet - Page 4

• Manufacturer Part Number: FDMS3016DC
• Manufacturer: Fairchild Semiconductor

©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
Typical Characteristics
50
40
30
20
10
50
40
30
20
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On- Resistance
Figure 1.
0
0
-50
0
1
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
V
I
DS
D
GS
-25
vs Junction Temperature
= 12A
= 5V
= 10V
1
V
V
T
On-Region Characteristics
GS
DS
J
2
V
0
,
V
V
T
,
, GATE TO SOURCE VOLTAGE (V)
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
JUNCTION TEMPERATURE (
GS
GS
J
DRAIN TO SOURCE VOLTAGE (V)
= 150
= 4V
= 10V
= 4.5V
25
2
o
C
P
50
s
3
T
T
J
3
J
= -55
75
= 25°C unless otherwise noted
T
P
J
s
o
= 25
C
100
4
o
o
4
C )
C
V
GS
V
125
GS
= 3.5V
= 3V
150
5
5
4
0.001
0.01
0.1
50
40
30
20
10
50
10
0
1
6
5
4
3
2
1
0
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
V
= 0V
GS
0.2
SD
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
T
T
J
10
J
, BODY DIODE FORWARD VOLTAGE (V)
= 3V
Normalized On-Resistance
V
= 25
On-Resistance vs Gate to
= 150
GS
Source Voltage
4
I
Source to Drain Diode
D
,
o
,
V
GATE TO SOURCE VOLTAGE (V)
C
DRAIN CURRENT(A)
o
GS
0.4
C
T
= 3.5V
J
= 125
20
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
I
D
o
= 12A
0.6
C
6
P
s
30
V
GS
0.8
= 4V
T
J
= -55
8
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V
40
T
V
GS
J
1.0
GS
o
P
= 25
C
= 10V
s
= 4.5V
o
C
1.2
10
50