FDMS3016DC Fairchild Semiconductor, FDMS3016DC Datasheet - Page 2

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FDMS3016DC

Manufacturer Part Number
FDMS3016DC
Description
Manufacturer
Fairchild Semiconductor
Datasheet
©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
iss
oss
rss
g
ΔT
ΔT
g
g
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
T
J
= 25 °C unless otherwise noted
V
V
V
V
V
f = 1 MHz
V
I
V
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DD
GS
GS
GS
GS
GS
GS
GS
DS
DS
GS
GS
DS
GS
= 12 A, di/dt = 100 A/μs
= 250 μA, referenced to 25 °C
= 250 μA, V
= 250 μA, referenced to 25 °C
= 15 V, V
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 5 V, I
= 0 V, I
= 0 V, I
= 24 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= ±20 V, V
2
DS
Test Conditions
, I
D
S
S
D
D
D
D
= 1.9 A
D
= 12 A
= 12 A
GS
GEN
GS
= 250 μA
GS
= 12 A,
= 12 A
= 12 A, T
DS
= 10 A
= 0 V,
= 0 V
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 12 A
J
= 15 V,
(Note 2)
= 125 °C
(Note 2)
Min
1.0
30
1038
0.82
0.73
513
0.9
Typ
1.9
5.0
7.0
7.5
87
7.6
2.5
25
44
19
16
-6
9
17
9
3
2
3
1385
±100
Max
685
135
10.6
1.3
1.2
3.0
6.0
9.0
9.4
45
18
18
10
35
10
23
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1
mV/°C
mV/°C
Units
nC
pF
pF
pF
μA
nA
nC
nC
nC
nC
ns
Ω
ns
ns
ns
ns
V
V
S
V

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