FDMS7608S Fairchild Semiconductor, FDMS7608S Datasheet - Page 3

• Manufacturer Part Number: FDMS7608S
• Description: This device includes two specialized N-Channel MOSFETs in a dual MLP package
• Manufacturer: Fairchild Semiconductor

FDMS7608S Rev.C
©2011 Fairchild Semiconductor Corporation
Notes:
1.R
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
4. Q1: E
Electrical Characteristics
Drain-Source Diode Characteristics
V
t
Q
rr
Q2: E
SD
rr
θJA
Symbol
is determined with the device mounted on a 1 in
AS
AS
of 29 mJ is based on starting T
of 33 mJ is based on starting T
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
J
J
= 25
= 25
c. 125 °C/W when mounted on a
a. 57 °C/W when mounted on
minimum pad of 2 oz copper
a 1 in
o
o
C; N-ch: L = 0.3 mH, I
C; N-ch: L = 0.3 mH, I
2
2
pad of 2 oz copper
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25°C unless otherwise noted
AS
AS
V
V
V
V
Q1
I
Q2
I
F
F
GS
GS
GS
GS
= 14 A, V
= 15 A, V
= 12 A, di/dt = 100 A/μs
= 15 A, di/dt = 300 A/μs
= 0 V, I
= 0 V, I
= 0 V, I
= 0 V, I
DD
DD
Test Conditions
= 27 V, V
= 27 V, V
S
3
S
S
S
= 2 A
= 2 A
= 12 A
= 15 A
GS
GS
= 10 V. 100% tested at L = 3 mH, I
= 10 V. 100% tested at L = 3 mH, I
(Note 2)
(Note 2)
(Note 2)
(Note 2)
d. 120 °C/W when mounted on a
b. 50 °C/W when mounted on
minimum pad of 2 oz copper
a 1 in
θJC
is guaranteed by design while R
Type
2
Q1
Q1
Q2
Q2
Q1
Q2
Q1
Q2
pad of 2 oz copper
AS
AS
Min
= 3.75 A.
= 3.9 A.
0.75
0.84
0.63
0.80
Typ
25
21
19
9
θCA
www.fairchildsemi.com
Max
1.1
1.2
0.8
1.2
40
34
18
33
is determined by
Units
nC
ns
V