FDMS7608S Fairchild Semiconductor, FDMS7608S Datasheet - Page 10
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FDMS7608S
Manufacturer Part Number
FDMS7608S
Description
This device includes two specialized N-Channel MOSFETs in a dual MLP package
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMS7608S.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDMS7608S
Manufacturer:
RENESAS
Quantity:
3 200
Part Number:
FDMS7608S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDMS7608S Rev.C
©2011 Fairchild Semiconductor Corporation
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS7608S.
Typical Characteristics
16
12
diode reverse recovery characteristic
-4
23.06 23.08 23.10 23.12 23.14 23.16 23.18 23.20 23.22 23.24
8
4
0
Figure 27. FDMS7608S SyncFET body
TIME (ns)
di/dt = 300 A/
(continued)
μ
s
10
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
-2
-3
-4
-5
-6
Figure 28. SyncFET body diode reverse
leakage versus drain-source voltage
0
5
V
DS
10
, REVERSE VOLTAGE (V)
T
T
T
J
J
J
15
= 125
= 100
= 25
o
o
o
C
C
C
20
25
www.fairchildsemi.com
30