FDMS7608S Fairchild Semiconductor, FDMS7608S Datasheet
FDMS7608S
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FDMS7608S Summary of contents
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... Thermal Resistance, Junction to Case θJC Package Marking and Ordering Information Device Marking Device FDMS7608S FDMS7608S ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev.C ® MOSFET General Description This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally = ...
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... Fall Time f Q Total Gate Charge g(TOT) Q Total Gate Charge g(TOT) Q Gate to Source Charge gs Q Gate to Drain “Miller” Charge gd ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev 25°C unless otherwise noted J Test Conditions = 250 μ mA 250 μ ...
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... As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied based on starting Q2 based on starting ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev 25°C unless otherwise noted J Test Conditions ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 1.5 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev 25°C unless otherwise noted 3 μ 1.5 2 ...
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... MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev 25°C unless otherwise noted J 2000 1000 100 ...
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... Typical Characteristics (Q1 N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 13. ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev 25°C unless otherwise noted J SINGLE PULSE 125 C/W θ JA (Note 1b RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...
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... DUTY CYCLE = 0.5% MAX 125 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 18. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev °C unless otherwise noted μ s 1.5 2.0 Figure 15. Normalized on-Resistance vs Drain 100 125 150 ...
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... MAX RATED 120 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 24. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev 25°C unless otherwise noted J 3000 1000 = 100 ...
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... Typical Characteristics (Q2 N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 26. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev °C unless otherwise noted J SINGLE PULSE 120 C/W θ JA (Note 1b RECTANGULAR PULSE DURATION (sec) ...
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... 23.06 23.08 23.10 23.12 23.14 23.16 23.18 23.20 23.22 23.24 TIME (ns) Figure 27. FDMS7608S SyncFET body diode reverse recovery characteristic ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev.C (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device ...
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... Dimensional Outline and Pad Layout PIN#1 QUADRANT MAX 0.10 C 0.08 C 0.05 0.00 1 PIN #1 IDENT 0.66 0.55 0.340 0. 1.27 0.46 0. 0.05 C ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev TOP VIEW (5X (0.20 ) SIDE VIEW SEATING PL ANE 2.67 0. 3.85 0.48 3.75 ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS7608S Rev.C Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...