FDMS3008SDC Fairchild Semiconductor, FDMS3008SDC Datasheet - Page 4

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FDMS3008SDC

Manufacturer Part Number
FDMS3008SDC
Description
Manufacturer
Fairchild Semiconductor
Datasheet
©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C
Typical Characteristics
200
150
100
200
150
100
1.6
1.4
1.2
1.0
0.8
0.6
50
50
Figure 3. Normalized On Resistance
0
0
Figure 1.
0.0
2.0
-75
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
D
-50
GS
= 28 A
vs Junction Temperature
= 5 V
V
= 10 V
GS
V
V
T
= 3.5 V
-25
DS
J
GS
V
On Region Characteristics
,
2.5
0.5
GS
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
,
DRAIN TO SOURCE VOLTAGE (V)
V
= 4 V
GS
0
V
= 4.5 V
V
GS
T
GS
J
= 6 V
= 25
25
= 10 V
μ
T
s
1.0
3.0
J
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
= 125
C
50
T
J
= 25°C unless otherwise noted
o
C
75
T
3.5
1.5
J
o
100 125 150
= -55
C )
o
C
μ
s
4.0
2.0
4
0.001
0.01
200
100
10
0.1
10
4
3
2
1
0
8
6
4
2
0
Figure 2.
Figure 4.
1
0.0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
0.2
SD
= 0 V
40
Normalized On-Resistance
V
, BODY DIODE FORWARD VOLTAGE (V)
T
V
On-Resistance vs Gate to
GS
J
GS
I
Source Voltage
D
= 125
4
Source to Drain Diode
,
,
GATE TO SOURCE VOLTAGE (V)
= 3.5 V
DRAIN CURRENT (A)
I
D
0.4
T
= 28 A
o
C
J
V
80
= -55
GS
= 6 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
J
o
0.6
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
C
= 25
V
T
T
GS
J
J
120
= 125
o
= 25
= 4 V
C
V
0.8
GS
o
o
C
C
= 10 V
8
160
V
www.fairchildsemi.com
GS
1.0
= 4.5 V
μ
s
μ
s
200
10
1.2

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