FDMS3008SDC Fairchild Semiconductor, FDMS3008SDC Datasheet - Page 2

• Manufacturer Part Number: FDMS3008SDC
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
g
g
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
T
J
= 25°C unless otherwise noted
V
V
V
V
V
f = 1MHz
V
I
V
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DS
DD
GS
GS
GS
GS
GS
GS
GS
DS
GS
GS
DS
GS
= 28 A, di/dt = 300 A/μs
= 10 mA, referenced to 25°C
= 1 mA, V
= 10 mA, referenced to 25°C
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 5 V, I
= 15 V, V
= 0 V, I
= 0 V, I
= 24 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 20 V, V
2
DS
Test Conditions
, I
D
S
S
D
GS
D
D
D
= 2 A
= 28 A
D
= 28 A
GS
GEN
GS
DS
= 1 mA
= 28 A,
= 28 A, T
= 28 A
= 22 A
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 28 A
= 15 V,
J
(Note 2)
(Note 2)
= 125°C
Min
1.2
30
3400
1115
144
0.7
0.4
0.8
Typ
1.9
1.8
2.7
2.4
4.7
9.6
4.3
39
80
32
15
33
46
21
-5
13
3
4520
1485
Max
120
0.8
1.2
500
100
3.0
2.6
3.3
3.6
51
62
27
10
53
10
64
29
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mV/°C
mV/°C
Units
mΩ
pF
pF
pF
nC
ns
μA
nA
nC
nC
nC
nC
Ω
ns
ns
ns
ns
V
S
V
V