BLL1214-250R NXP Semiconductors, BLL1214-250R Datasheet - Page 9
BLL1214-250R
Manufacturer Part Number
BLL1214-250R
Description
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap
Manufacturer
NXP Semiconductors
Datasheet
1.BLL1214-250R.pdf
(12 pages)
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10. Abbreviations
11. Revision history
Table 11.
BLL1214-250R_1
Product data sheet
Document ID
BLL1214-250R_1
Revision history
Table 10.
Acronym
DC
LDMOS
LDMOST
RF
L-band
VSWR
Release date
20100204
Abbreviations
Description
Direct Current
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Long wave band
Voltage Standing-Wave Ratio
Data sheet status
Product data sheet
Rev. 01 — 4 February 2010
Change notice
-
LDMOS L-band radar power transistor
BLL1214-250R
Supersedes
-
© NXP B.V. 2010. All rights reserved.
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