BLL1214-250R NXP Semiconductors, BLL1214-250R Datasheet - Page 5

• Manufacturer Part Number: BLL1214-250R
• Description: Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLL1214-250R_1
Product data sheet
Fig 2.
See
Dimensions in mm.
The components are situated in one side of the copper-clad Rodgers Duroid 6010 Printed-Circuit
Board (PCB); ε
ground plane.
Component layout
Table 9
for list of components.
r
Rev. 01 — 4 February 2010
= 10.2 F/m; thickness = 0.64 mm. The other side is unetched and serves as a
40
C1
C3
C5
LDMOS L-band radar power transistor
C7
C8
C6
40
C4
BLL1214-250R
C2
mld866
© NXP B.V. 2010. All rights reserved.
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