BLL1214-250R NXP Semiconductors, BLL1214-250R Datasheet - Page 6

• Manufacturer Part Number: BLL1214-250R
• Description: Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Test information
BLL1214-250R_1
Product data sheet
Fig 3.
Fig 5.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
(dB)
(W)
300
200
100
G
P
16
12
L
p
0
8
4
0
0
t
Output power as a function of input power;
typical values
t
Power gain as a function of load power;
typical values
0
p
p
(2)
= 1 ms; δ = 10 %.
= 1 ms; δ = 10 %.
(3)
(3)
(1)
8.1 RF performance
(1)
4
100
(2)
8
200
12
P
L
P
(W)
i
(W)
mld858
mld860
Rev. 01 — 4 February 2010
300
16
Fig 4.
Fig 6.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
(dB)
(W)
300
200
100
G
P
16
12
L
p
0
8
4
0
0
t
Output power as a function of input power;
typical values
0
t
Power gain as a function of load power;
typical values
p
p
(2)
= 100 μs; δ = 10 %.
= 100 μs; δ = 10 %.
LDMOS L-band radar power transistor
(3)
(3)
(1)
(1)
4
100
(2)
BLL1214-250R
8
200
12
© NXP B.V. 2010. All rights reserved.
P
L
P
(W)
i
mld859
(W)
mld861
300
16
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