BLL1214-250R NXP Semiconductors, BLL1214-250R Datasheet - Page 2

• Manufacturer Part Number: BLL1214-250R
• Description: Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLL1214-250R_1
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLL1214-250R
Symbol
V
V
P
T
T
Symbol
Z
stg
j
th(j-h)
DS
GS
tot
Connected to flange.
Parameter
transient thermal impedance from
junction to heatsink
Parameter
drain-source voltage
gate-source voltage
total power dissipation
storage temperature
junction temperature
Pinning
Ordering information
Limiting values
Thermal characteristics
drain
gate
source
Description
Package
Name
-
Rev. 01 — 4 February 2010
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
T
Conditions
h
≤ 70 °C; t
[1]
p
= 1 ms; δ = 10 %
Conditions
T
LDMOS L-band radar power transistor
Simplified outline
h
t
t
p
p
= 25 °C
= 100 μs; δ = 10 %
= 1 ms; δ = 10 %
1
2
BLL1214-250R
3
Graphic symbol
Min
-
−22
-
−65
-
© NXP B.V. 2010. All rights reserved.
2
Max
75
+22
400
+150
200
sym112
Typ
0.17
0.32
Version
SOT502A
1
3
Unit
V
V
A
°C
°C
2 of 12
Unit
K/W
K/W