BLL1214-250R NXP Semiconductors, BLL1214-250R Datasheet - Page 4

• Manufacturer Part Number: BLL1214-250R
• Description: Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLL1214-250R_1
Product data sheet
7.2 Application circuit
Table 9.
See
The components are situated in one side of the copper-clad Rodgers Duroid 6010 Printed-Circuit
Board (PCB);
ground plane.
[1]
[2]
Component Description
C1, C3
C2, C4
C5, C6
C7
C8
Fig 1.
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 200B or capacitor of same quality.
Figure
Definition of transistor impedance
2.
List of components
ε
r
multilayer ceramic chip capacitor 39 pF
multilayer ceramic chip capacitor 47 pF
multilayer ceramic chip capacitor 20 nF
multilayer ceramic chip capacitor 36 pF
electrolytic capacitor
= 10.2 F/m; thickness = 0.64 mm. The other side is unetched and serves as a
Rev. 01 — 4 February 2010
gate
Z
S
Value
100 μF; 100 V
001aaf059
LDMOS L-band radar power transistor
Z
drain
L
BLL1214-250R
[1]
[1]
[2]
[2]
Remarks
© NXP B.V. 2010. All rights reserved.
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