BLL1214-250R NXP Semiconductors, BLL1214-250R Datasheet - Page 3

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap

BLL1214-250R

Manufacturer Part Number
BLL1214-250R
Description
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap
Manufacturer
NXP Semiconductors
Datasheet

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6. Characteristics
7. Application information
BLL1214-250R_1
Product data sheet
6.1 Ruggedness in class-AB operation
7.1 Impedance information
Table 6.
T
Table 7.
Mode of operation: pulsed RF; t
V
source class-AB circuit.
The BLL1214-250R is capable of withstanding a load mismatch corresponding to
VSWR = 3 : 1 through all phases under the following conditions: V
f = 1.2 GHz to 1.4 GHz at rated load power.
Table 8.
Typical values unless otherwise specified.
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
V
G
η
P
t
t
f
GHz
1.20
1.25
1.30
1.35
1.40
DSS
DSX
GSS
r
f
j
DS
fs
D
(BR)DSS
GS(th)
L
DS
droop(pulse)
DS(on)
p
= 25
= 36 V; I
°
C.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
DC characteristics
RF characteristics
Typical impedance
Dq
Parameter
output power
drain-source voltage
power gain
drain efficiency
pulse droop power
rise time
fall time
= 150 mA; T
Rev. 01 — 4 February 2010
h
= 25
p
= 1 ms;
Z
Ω
1.3 − j2.8
1.9 − j2.8
4.6 − j2.9
5.7 − j0.3
2.7 − j1.8
°
S
C; Z
th(mb-h)
δ
= 10 %; f = 1.2 GHz to 1.4 GHz; RF performance at
Conditions
V
V
V
V
V
V
GS
DS
GS
GS
DS
GS
DS
GS
= 0.25 K/W; unless otherwise specified, in a common
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= ±20 V; V
= 9 V; I
GS(th)
LDMOS L-band radar power transistor
D
D
DS
D
D
Conditions
P
P
P
P
P
P
= 3 mA
+ 9 V;
= 10 A
= 300 mA
= 10 A
L
L
L
L
L
L
DS
= 36 V
= 250 W
= 250 W
= 250 W
= 250 W
= 250 W
= 250 W
= 0 V
BLL1214-250R
Z
Ω
1.1 − j0.9
1.0 − j0.5
0.8 − j0.2
0.7 − j0.3
0.6 − j0.4
L
Min
75
4
-
45
-
-
-
DS
Min Typ Max Unit
-
-
-
-
-
-
-
= 36 V;
© NXP B.V. 2010. All rights reserved.
Typ
-
-
-
-
-
9
60
250 -
36
13
47
0.2
15
5
-
-
-
-
-
-
Max Unit
-
5
1
-
1
-
-
3 of 12
W
V
dB
%
dB
ns
ns
V
V
μA
A
μA
S

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