BLF7G22L-160 NXP Semiconductors, BLF7G22L-160 Datasheet - Page 9

• Manufacturer Part Number: BLF7G22L-160
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G22L-160_7G22LS-160
Product data sheet
7.6 CW
Fig 16. Peak-to-average power ration as function of load power; typical values
Fig 17. Power gain and drain efficiency as function of load power; typical values
(1) f = 2110 MHz
(2) f = 2170 MHz
(1) f = 2110 MHz
(2) f = 2170 MHz
V
V
DS
DS
= 28 V; I
= 28 V; I
All information provided in this document is subject to legal disclaimers.
Dq
Dq
BLF7G22L-160; BLF7G22LS-160
Rev. 2.1 — 2 November 2011
PAR
(dB)
(dB)
G
= 1300 mA.
= 1300 mA.
p
12
22
20
18
16
14
12
8
4
0
28
38
33
G
η
D
p
44
38
(2)
(1)
(1)
(2)
43
50
P
L
48
(dBm)
P
001aao002
001aao003
L
(dBm)
53
56
Power LDMOS transistor
60
48
36
24
12
0
(%)
η
D
© NXP B.V. 2011. All rights reserved.
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