BLF7G22L-160 NXP Semiconductors, BLF7G22L-160 Datasheet
BLF7G22L-160
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BLF7G22L-160 Summary of contents
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... BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2.1 — 2 November 2011 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8 0.01 % probability on CCDF; ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF7G22L-160 (SOT502A BLF7G22LS-160 (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF7G22L-160 BLF7G22LS-160 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5 ...
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... Symbol Parameter PAR output peak-to-average ratio P O 7.1 Ruggedness in class-AB operation The BLF7G22L-160 and BLF7G22LS-160 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF7G22L-160_7G22LS-160 Product data sheet BLF7G22L-160 ...
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... MHz - 1300 mA ( 2110 MHz ( 2170 MHz Fig 2. Adjacent channel power ratio (5 MHz function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet BLF7G22L-160; BLF7G22LS-160 (dB (2) (1) 16 η ...
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... Input return loss as function of load power; typical values 7.3 2-Carrier W-CDMA 10 MHz 1300 mA ( 2110 MHz ( 2170 MHz Fig 6. Power gain and drain efficiency as function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet BLF7G22L-160; BLF7G22LS-160 001aan990 9 PAR (dB) 6 ( ...
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... W-CDMA 1300 mA ( 2110 MHz ( 2170 MHz Fig 9. Power gain and drain efficiency as function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet BLF7G22L-160; BLF7G22LS-160 001aan993 -10 ACPR 10M (dBc) -30 (2) -50 - ...
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... Fig 10. Adjacent channel power ratio (5 MHz function of load power; typical values PAR 1300 mA ( 2110 MHz ( 2170 MHz Fig 12. Peak-to-average power ration as function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet BLF7G22L-160; BLF7G22LS-160 001aan996 -40 ACPR 10M (dBc) -50 -60 (2) - ...
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... MHz 885 kHz ( 2170 MHz 885 kHz ( 2110 MHz; f 885 kHz ( 2170 MHz; f 885 kHz Fig 14. Adjacent channel power ratio (5 MHz function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet BLF7G22L-160; BLF7G22LS-160 (dB ...
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... MHz Fig 16. Peak-to-average power ration as function of load power; typical values 7 ( 2110 MHz ( 2170 MHz Fig 17. Power gain and drain efficiency as function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet BLF7G22L-160; BLF7G22LS-160 12 PAR (dB ...
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... NXP Semiconductors 7.7 CW-pulsed V ( 2110 MHz ( 2170 MHz Fig 18. Power gain and drain efficiency as function of load power; typical values BLF7G22L-160_7G22LS-160 Product data sheet BLF7G22L-160; BLF7G22LS-160 (dB η 0.10 ms; 1300 mA All information provided in this document is subject to legal disclaimers. ...
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... R1 [1] American Technical Ceramics type 800B or capacitor of same quality. [2] American Technical Ceramics type 100A or capacitor of same quality. [3] TDK or capacitor of same quality. BLF7G22L-160_7G22LS-160 Product data sheet BLF7G22L-160; BLF7G22LS-160 C5 = 3.5; thickness = 0.76 mm; thickness copper plating = 35 m. r List of components Figure 19. Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor ...
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... Table 10. Typical values unless otherwise specified. f MHz 2050 2080 2110 2140 2170 2200 2230 Fig 20. Definition of transistor impedance BLF7G22L-160_7G22LS-160 Product data sheet BLF7G22L-160; BLF7G22LS-160 Typical impedance Z S 1.39 j4.13 1.67 j3.93 2.01 j3.89 2.28j4.09 2.27 j4.47 1.92j4.76 1.42 j4.75 gate Z S All information provided in this document is subject to legal disclaimers ...
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... 4.72 12.83 0.15 20.02 19.96 mm 3.43 12.57 19.61 19.66 0.08 0.186 0.505 0.006 0.788 0.786 inches 0.495 0.135 0.003 0.772 0.774 OUTLINE VERSION IEC SOT502A Fig 21. Package outline SOT502A BLF7G22L-160_7G22LS-160 Product data sheet BLF7G22L-160; BLF7G22LS-160 scale 9.50 9.53 1.14 19.94 5.33 3.38 9.30 9.25 3 ...
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... 4.72 12.83 0.15 20.02 19.96 mm 3.43 12.57 19.61 19.66 0.08 0.186 0.505 0.006 0.788 0.786 inches 0.495 0.135 0.003 0.772 0.774 OUTLINE VERSION IEC SOT502B Fig 22. Package outline SOT502B BLF7G22L-160_7G22LS-160 Product data sheet BLF7G22L-160; BLF7G22LS-160 scale 9.50 9.53 1.14 19.94 5.33 1.70 9.30 9.25 1 ...
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... ESD LDMOS LDMOST PAR PDPCH RF SMD VSWR W-CDMA 10. Revision history Table 12. Revision history Document ID BLF7G22L-160_7G22LS-160 v.2.1 20111102 Modifications: BLF7G22L-160_7G22LS-160 v.2 Modifications: BLF7G22L-160_7G22LS-160 v.1 BLF7G22L-160_7G22LS-160 Product data sheet BLF7G22L-160; BLF7G22LS-160 Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel ...
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... BLF7G22L-160_7G22LS-160 Product data sheet BLF7G22L-160; BLF7G22LS-160 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF7G22L-160_7G22LS-160 Product data sheet BLF7G22L-160; BLF7G22LS-160 NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 2 November 2011 Document identifier: BLF7G22L-160_7G22LS-160 ...