BLF7G22L-160 NXP Semiconductors, BLF7G22L-160 Datasheet - Page 5

• Manufacturer Part Number: BLF7G22L-160
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G22L-160_7G22LS-160
Product data sheet
Fig 4.
Fig 6.
RL
(dB)
(1) f = 2110 MHz
(2) f = 2170 MHz
(1) f = 2110 MHz
(2) f = 2170 MHz
in
40
30
20
10
0
28
V
Input return loss as function of load power;
typical values
V
Power gain and drain efficiency as function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
33
7.3 2-Carrier W-CDMA 10 MHz
Dq
Dq
= 1300 mA.
= 1300 mA.
38
43
(dB)
G
p
22
20
18
16
14
12
28
48
All information provided in this document is subject to legal disclaimers.
P
001aan990
L
(dBm)
(1)
(2)
BLF7G22L-160; BLF7G22LS-160
Rev. 2.1 — 2 November 2011
33
53
η
G
D
p
38
(2)
(1)
Fig 5.
43
PAR
(dB)
(1) f = 2110 MHz
(2) f = 2170 MHz
9
6
3
0
28
V
Peak-to-average power ration as function of
load power; typical values
48
DS
001aan992
P
L
= 28 V; I
(dBm)
33
53
50
40
30
20
10
0
Dq
(%)
η
D
= 1300 mA.
38
Power LDMOS transistor
43
(1)
(2)
© NXP B.V. 2011. All rights reserved.
48
P
001aan991
L
(dBm)
53
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