BLF7G22L-160 NXP Semiconductors, BLF7G22L-160 Datasheet - Page 12

160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz

BLF7G22L-160

Manufacturer Part Number
BLF7G22L-160
Description
160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BLF7G22L-160_7G22LS-160
Product data sheet
7.9 Impedance information
Table 10.
Typical values unless otherwise specified.
f
MHz
2050
2080
2110
2140
2170
2200
2230
Fig 20. Definition of transistor impedance
Typical impedance
All information provided in this document is subject to legal disclaimers.
BLF7G22L-160; BLF7G22LS-160
Rev. 2.1 — 2 November 2011
Z
1.39 j4.13
1.67  j3.93
2.01  j3.89
2.28j4.09
2.27  j4.47
1.92j4.76
1.42  j4.75
S
gate
Z
S
001aaf059
drain
Z
L
Z
1.41  j3.80
1.38 j3.63
1.35j3.45
1.33 j3.28
1.31  j3.12
1.28 j2.95
1.26 j2.79
L
Power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
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