BLF7G22L-160 NXP Semiconductors, BLF7G22L-160 Datasheet - Page 2

• Manufacturer Part Number: BLF7G22L-160
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF7G22L-160_7G22LS-160
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
BLF7G22L-160 (SOT502A)
1
2
3
BLF7G22LS-160 (SOT502B)
1
2
3
Type number
BLF7G22L-160
BLF7G22LS-160
Symbol
V
V
I
T
T
Symbol Parameter
R
D
stg
j
DS
GS
th(j-c)
Connected to flange.
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
BLF7G22L-160; BLF7G22LS-160
Rev. 2.1 — 2 November 2011
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
[1]
Simplified outline
Conditions
T
case
= 80 C; P
1
2
1
2
Power LDMOS transistor
3
L
3
= 55 W
Graphic symbol
-
-
-
Min
0.5
65
© NXP B.V. 2011. All rights reserved.
2
2
Max
65
+13
36
+150
200
Typ
0.29
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
2 of 18
Unit
K/W
Unit
V
V
A
C
C