BLF7G22L-130 NXP Semiconductors, BLF7G22L-130 Datasheet
BLF7G22L-130
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BLF7G22L-130 Summary of contents
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... BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 4 — 20 January 2011 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8 0.01 % probability on CCDF; ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF7G22L-130 (SOT502A BLF7G22LS-130 (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF7G22L-130 BLF7G22LS-130 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF7G22L-130_7G22LS-130 Product data sheet BLF7G22L-130; BLF7G22LS-130 ...
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... Symbol P L(AV η D ACPR 7.1 Ruggedness in class-AB operation The BLF7G22L-130 and BLF7G22LS-130 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF7G22L-130_7G22LS-130 Product data sheet BLF7G22L-130; BLF7G22LS-130 Thermal characteristics Parameter thermal resistance from junction to case Characteristics C unless otherwise specified ...
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... Impedance information Table 950 mA; main transistor and (MHz) 2050 2140 2230 Fig 1. BLF7G22L-130_7G22LS-130 Product data sheet BLF7G22L-130; BLF7G22LS-130 Typical impedance information = defined in Figure (Ω) 1.3 − j3.6 1.9 − j4.2 3.1 − j4.7 gate Definition of transistor impedance All information provided in this document is subject to legal disclaimers. ...
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... Power gain as a function of load power; typical values 950 mA ( 2110 MHz ( 2140 MHz ( 2170 MHz Fig 4. Input return loss as a function of load power; typical values BLF7G22L-130_7G22LS-130 Product data sheet BLF7G22L-130; BLF7G22LS-130 001aal341 η D (%) 120 160 P ( 2110 MHz ( 2140 MHz ( 2170 MHz Fig 3. ...
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... 950 mA ( 2112.5 MHz ( 2140 MHz ( 2167.5 MHz Fig 7. Adjacent channel power ratio (5MHz function of load power; typical values BLF7G22L-130_7G22LS-130 Product data sheet BLF7G22L-130; BLF7G22LS-130 001aal345 η D (%) ( 2112.5 MHz ( 2140 MHz ( 2167.5 MHz Fig 6. 001aal348 PAR (dB ( 2112 ...
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... Power gain as a function of load power; typical values 950 mA; carrier spacing 5 MHz ( 2115 MHz ( 2140 MHz ( 2165 MHz Fig 11. Adjacent channel power ratio (5 MHz function of load power; typical values BLF7G22L-130_7G22LS-130 Product data sheet BLF7G22L-130; BLF7G22LS-130 001aal351 (W) L Fig 10. drain efficiency as a function of load power; 0 ACPR 5M (dBc) − ...
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... 950 mA; carrier spacing 10 MHz ( 2117.5 MHz ( 2140 MHz ( 2162.5 MHz Fig 14. Adjacent channel power ratio (5 MHz function of load power; typical values BLF7G22L-130_7G22LS-130 Product data sheet BLF7G22L-130; BLF7G22LS-130 001aal355 50 η D (%) ( 2117.5 MHz ( 2140 MHz ( 2162.5 MHz Fig 13. Drain efficiency as a function of load power; ...
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... Table 9. See Figure 16 Component C1, C2, C3, C4, C5 C6, C7 C8, C9, C10 C11 R1 BLF7G22L-130_7G22LS-130 Product data sheet BLF7G22L-130; BLF7G22LS-130 C2 INPUT V1 List of components for component layout. Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor SMD resistor All information provided in this document is subject to legal disclaimers. ...
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... UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 17. Package outline SOT502A BLF7G22L-130_7G22LS-130 Product data sheet BLF7G22L-130; BLF7G22LS-130 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...
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... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 18. Package outline SOT502B BLF7G22L-130_7G22LS-130 Product data sheet BLF7G22L-130; BLF7G22LS-130 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...
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... Revision history Document ID BLF7G22L-130_7G22LS-130 v.4 Modifications: BLF7G22L-130_7G22LS-130 v.3 BLF7G22L-130_7G22LS-130 v.2 BLF7G22LS-130 v.1 BLF7G22L-130_7G22LS-130 Product data sheet BLF7G22L-130; BLF7G22LS-130 Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel ElectroStatic Discharge Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor ...
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... BLF7G22L-130_7G22LS-130 Product data sheet BLF7G22L-130; BLF7G22LS-130 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF7G22L-130_7G22LS-130 Product data sheet BLF7G22L-130; BLF7G22LS-130 NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 20 January 2011 Document identifier: BLF7G22L-130_7G22LS-130 ...