BLF7G22L-160 NXP Semiconductors, BLF7G22L-160 Datasheet - Page 4

• Manufacturer Part Number: BLF7G22L-160
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G22L-160_7G22LS-160
Product data sheet
Fig 1.
Fig 2.
ACPR
(dBc)
(1) f = 2110 MHz
(2) f = 2170 MHz
(1) f = 2110 MHz
(2) f = 2170 MHz
-10
-20
-30
-40
-50
-60
5M
28
V
Power gain and drain efficiency as function of load power; typical values
V
Adjacent channel power ratio (5 MHz) as a
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
f + 5 MHz
f - 5 MHz
33
7.2 2-Carrier W-CDMA 5 MHz
Dq
Dq
= 1300 mA.
= 1300 mA.
38
(1)
43
(dB)
G
p
(2)
22
20
18
16
14
12
28
48
All information provided in this document is subject to legal disclaimers.
P
001aan988
L
(dBm)
BLF7G22L-160; BLF7G22LS-160
Rev. 2.1 — 2 November 2011
33
53
G
η
p
D
38
(2)
(1)
Fig 3.
ACPR
43
(dBc)
(1) f = 2110 MHz
(2) f = 2170 MHz
-20
-30
-40
-50
-60
-70
10M
28
V
Adjacent channel power ratio (10 MHz) as a
function of load power; typical values
48
DS
001aan987
P
f + 10 MHz
f - 10 MHz
L
= 28 V; I
(dBm)
33
53
50
40
30
20
10
0
(1)
Dq
(%)
η
D
= 1300 mA.
38
(2)
Power LDMOS transistor
43
© NXP B.V. 2011. All rights reserved.
48
P
001aan989
L
(dBm)
53
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