GA100NA60UP Vishay Semiconductors, GA100NA60UP Datasheet - Page 8

no-image

GA100NA60UP

Manufacturer Part Number
GA100NA60UP
Description
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 50 A
Manufacturer
Vishay Semiconductors
Datasheet
GA100NA60UP
Vishay Semiconductors
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
www.vishay.com
8
Dimensions
Packaging information
查询"GA100NA60UP"供应商
Device code
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
1
2
3
4
5
6
7
8
G
1
-
-
-
-
-
-
-
-
A
2
Device:
Silicon technology:
Current rating (100 = 100 A)
N = High side chopper
SOT-227
Voltage rating (60 = 600 V)
U = Ultrafast with matching diode
G = IGBT
A = Generation 4 IGBT, Generation 2 HEXFRED
Insulated Gate Bipolar Transistor
None = Standard production
P = Lead (Pb)-free
(Warp 2 Speed IGBT), 100 A
LINKS TO RELATED DOCUMENTS
100
3
2
N
4
A
5
60
3
1
4
6
DiodesEurope@vishay.com
U
7
www.vishay.com/doc?95036
www.vishay.com/doc?95037
P
8
®
Document Number: 94543
Revision: 22-Jul-10

Related parts for GA100NA60UP