GA100NA60UP Vishay Semiconductors, GA100NA60UP Datasheet - Page 6

• Manufacturer Part Number: GA100NA60UP
• Description: Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 50 A
• Manufacturer: Vishay Semiconductors

GA100NA60UP
Vishay Semiconductors
Fig. 17a - Test Circuit for Measurement of I
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80 %
of V
1 0 0 0 0
1 0 0 0
CE
1 0 0
1
0 0
V = 2 00 V
T = 1 2 5°C
T = 2 5 °C
Fig. 16 - Typical dI
R
J
J
I = 100A
I = 50A
I = 25A
F
F
F
I
rr
, t
430 µF
d(on)
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di /dt - (A/µ s)
, t
f
r
, t
d(off)
(rec)M
, t
f
Same type
device
as
D.U.T.
D.U.T.
LM
/dt vs. dI
, E
on
, E
Insulated Gate Bipolar Transistor
F
off(diode)
(Warp 2 Speed IGBT), 100 A
/dt
0 1
0 0
, t
rr
, Q
rr
,
V
ge
V
I
C
C
5%
10%
V
Fig. 17c - Test Waveforms for Circuit of Fig. 17a,
Fig. 17b - Test Waveforms for Circuit of Fig. 17a,
90%
CC
10 % + V
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t
d
10 %
I
(on)
C
t
G
t1
d(on)
Vce
Defining E
Defining E
tr
10%
5 % V
t
r
E
90 % I
on
off
on
CE
Gate voltage D.U.T.
, t
, t
E = (E
+ V
ts
C
d(off)
d(on)
G
Document Number: 94543
, t
, t
on
r
f
t2
t
Eon =
d(off)
+E
D.U.T. voltage
and current
I
90%
pk
off
Revision: 22-Jul-10
)
t2
V
t1
E
t
I
f
C
CE
off
I
C
dt
t=5μs