GA100NA60UP Vishay Semiconductors, GA100NA60UP Datasheet

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GA100NA60UP

Manufacturer Part Number
GA100NA60UP
Description
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 50 A
Manufacturer
Vishay Semiconductors
Datasheet
Document Number: 94543
Revision: 22-Jul-10
查询"GA100NA60UP"供应商
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter breakdown voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
Operating junction and storage
temperature range
Mounting torque
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, IGBT
Thermal resistance, junction to case, diode
Case to sink, flat, greased surface
Weight of module
V
CE(on)
at 100 A, 25 °C
I
V
C
CES
DC
SOT-227
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
600 V
100 A
1.8 V
SYMBOL
T
V
V
J
V
I
I
, T
P
CM
ISOL
CES
I
LM
GE
C
D
SYMBOL
Stg
R
R
R
thCS
thJC
thJC
T
T
Repetitive rating: V
by maximum junction temperature (fig. 20)
Any terminal to case, t = 1 minute
T
T
6 to 32 or M3 screw
C
C
C
C
= 25 °C
= 100 °C
= 25 °C
= 100 °C
FEATURES
• Ultrafast: Optimized for minimum saturation
• Very low conduction and switching losses
• Fully isolated package (2500 V AC/RMS)
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial market
BENEFITS
• Designed for increased operating efficiency in power
• Lower overall losses available at frequencies  20 kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug in compatible with other SOT-227 packages
TEST CONDITIONS
voltage and speed 0 to 40 kHz in hard
switching, > 200 kHz in resonant mode
conversion: PFC, UPS, SMPS, welding, induction heating
TYP.
GE
0.05
30
-
-
= 20 V; pulse width limited
DiodesEurope@vishay.com
Vishay Semiconductors
MAX.
0.50
1.0
-
-
GA100NA60UP
- 55 to + 150
MAX.
2500
± 20
(1.3)
600
100
200
200
250
100
50
12
www.vishay.com
UNITS
°C/W
g
UNITS
(N · m)
Ibf · in
°C
W
V
A
V
1

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GA100NA60UP Summary of contents

Page 1

... Any terminal to case minute ISOL ° 100 ° Stg screw SYMBOL TYP. R thJC R thJC R 0.05 thCS 30 GA100NA60UP Vishay Semiconductors MAX. 600 100 50 200 = 20 V; pulse width limited 200 ± 20 2500 250 100 - 150 12 (1.3) MAX. - 0. www.vishay.com DiodesEurope@vishay.com ...

Page 2

... GA100NA60UP 查询"GA100NA60UP"供应商 Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T PARAMETER Collector to emitter breakdown voltage Temperature coeffecient of breakdown voltage Collector to emitter saturation voltage Gate threshold voltage Temperature coefficient of threshold voltage Forward transconductance Zero gate voltage collector current Diode forward voltage drop ...

Page 3

... T = 150 150 15V = 15V 4.0 4.0 5.0 5.0 = 50V 8.0 9.0 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0. Rectangular Pulse Duration (sec) 1 GA100NA60UP Vishay Semiconductors 100 100 125 ° Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 2 15V PULSE WIDTH 2 ...

Page 4

... GA100NA60UP 查询"GA100NA60UP"供应商 Vishay Semiconductors 14000 1MHz ies 12000 res oes ce gc 10000 ? C ies 8000 6000 C oes 4000 2000 C res Collector-to-Emitter Voltage (V) CE Fig Typical Capacitance vs. ...

Page 5

... Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 1.6 2 100A 50A 25A /dt F GA100NA60UP Vishay Semiconductors 100A 50A 25A 5° ° /dt - (A/μ ...

Page 6

... GA100NA60UP 查询"GA100NA60UP"供应商 Vishay Semiconductors 5° ° 100A 50A 25A /dt - (A/µ Fig Typical dI (rec)M 430 µ Fig ...

Page 7

... Diode reverse recovery energy t3 t4 Fig. 17d - Test Waveforms for Circuit of Fig. 17a, Defining rec Gate signal device under test 50 V Current D.U.T. Voltage in D.U.T. Current 480 V GA100NA60UP Vishay Semiconductors ...

Page 8

... GA100NA60UP 查询"GA100NA60UP"供应商 Vishay Semiconductors ORDERING INFORMATION TABLE Device code CIRCUIT CONFIGURATION Dimensions Packaging information www.vishay.com For technical questions within your region, please contact one of the following: 8 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, Insulated Gate Bipolar Transistor ...

Page 9

... All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product ...

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