GA100NA60UP Vishay Semiconductors, GA100NA60UP Datasheet - Page 4

• Manufacturer Part Number: GA100NA60UP
• Description: Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 50 A
• Manufacturer: Vishay Semiconductors

GA100NA60UP
Vishay Semiconductors
www.vishay.com
4
查询"GA100NA60UP"供应商
14000
12000
10000
8000
6000
4000
2000
10
20
16
12
8
6
4
2
8
4
0
0
0
1
0
V
I
V CC = 480V
V GE = 15V
T J = 25°C
I C = 60A
CC
C
Fig. 8 - Typical Switching Losses vs.
Fig. 7 - Typical Gate Charge vs.
Fig. 6 - Typical Capacitance vs.
= 400V
= 50A
V
100
CE
Collector to Emitter Voltage
Q , Total Gate Charge (nC)
10
G
Gate to Emitter Voltage
V
C
C
C
R G , Gate Resistance ( Ω )
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
?
C
C
C
Gate Resistance
ies
oes
res
[e-mail], [e-mail],
=
=
=
=
200
For technical questions within your region, please contact one of the following:
0V,
C
C
C
20
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
300
30
C
ce
SHORTED
400
40
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
500
100
50
[e-mail]
1000
100
0.1
100
10
12
10
10
1
8
6
4
2
0
1
-60 -40 -20
20
1
V
T
R G = 5.0 Ω
TJ = 150°C
V GE = 15V
V CC = 480V
Fig. 10 - Typical Switching Losses vs.
GE
R G = 5.0 Ω
V GE = 15V
V CC = 480V
J
?
S AFE OPERATING AREA
Fig. 9 - Typical Switching Losses vs.
V
CE
= 20V
= 125 C
Collector to Emitter Current
T J , Junction Temperature (°C)
, Collector-to-Emitter Voltage (V)
40
Fig. 11 - Turn-Off SOA
I C , Collector Current (A)
Junction Temperature
o
0
10
20
40
60
60
Document Number: 94543
80 100 120 140 160
100
80
I C = 120A
I C = 60A
I C = 30A
Revision: 22-Jul-10
1000
100