GA100NA60UP Vishay Semiconductors, GA100NA60UP Datasheet - Page 2

• Manufacturer Part Number: GA100NA60UP
• Description: Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 50 A
• Manufacturer: Vishay Semiconductors

GA100NA60UP
Vishay Semiconductors
www.vishay.com
2
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Temperature coeffecient of
breakdown voltage
Collector to emitter saturation voltage
Gate threshold voltage
Temperature coefficient of
threshold voltage
Forward transconductance
Zero gate voltage collector current
Diode forward voltage drop
Gate to emitter leakage current
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn-on)
Gate emitter charge (turn-on)
Gate collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Internal emitter inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse recovery current
Diode reverse recovery charge
Diode peak rate of fall recovery
during t
查询"GA100NA60UP"供应商
b
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
V
V
SYMBOL
SYMBOL
dI
V
(BR)CES
GE(th)
V
V
(rec)M
(BR)CES
t
t
t
t
C
I
V
I
C
C
CE(on)
Q
Q
E
GE(th)
d(on)
d(off
E
E
d(on)
d(off)
GES
E
E
Q
g
CES
Q
L
t
I
t
t
t
t
oes
Insulated Gate Bipolar Transistor
FM
J
on
off
tot
ies
res
rr
rr
ge
gc
fe
r
f
ts
r
f
ts
E
rr
g
/ T
J
= 25 °C unless otherwise specified)
)
/dt
(Warp 2 Speed IGBT), 100 A
T
= 25 °C unless otherwise specified)
J
J
V
V
V
V
V
V
V
V
V
V
I
I
V
I
V
V
T
I
V
energy losses include “tail” and
diode reverse recovery
T
I
V
energy losses include “tail” and
diode reverse recovery
V
V
f = 1.0 MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
GE
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 50 A
= 50 A, T
= 50 A
= 60 A, V
= 60 A, V
= 25 °C
= 150 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 0 V, I
= 0 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= V
= V
= 100 V, I
= 0 V, V
= 0 V, V
= ± 20 V
= 15 V
= 15 V, R
= 15 V, R
= 0 V
= 400 V
= 30 V
GE
GE
, I
, I
C
C
J
CC
CC
C
C
CE
CE
C
C
C
TEST CONDITIONS
TEST CONDITIONS
= 150 °C
= 250 μA
= 1.0 mA
= 250 μA
= 250 μA
C
= 50 A, T
g
g
= 50 A
= 100 A
= 480 V
= 480 V
= 600 V
= 600 V, T
= 50 A
= 5.0
= 5.0
See fig. 13
See fig. 14
See fig. 15
See fig. 16
J
= 150 °C
J
[e-mail]
= 150 °C
See fig. 7
See fig. 6
I
V
dI/dt = 200
A/μs
F
R
= 50 A
= 200 V
See fig. 1, 4
See fig. 12
MIN.
MIN.
600
3.0
34
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Document Number: 94543
TYP.
TYP.
7400
- 7.6
0.36
1.49
1.80
1.47
1.16
0.41
2.51
2.92
4.78
430
130
240
120
380
170
730
120
360
780
370
220
2.0
7.3
1.3
48
57
80
57
80
90
90
11
52
-
-
-
-
-
Revision: 22-Jul-10
MAX.
MAX. UNITS
± 100
1200
640
190
140
180
550
250
2.1
6.0
1.3
1.6
1.3
4.4
72
11
16
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
mV/°C
V/°C
A/μs
mA
nC
mJ
mJ
nH
nC
μA
nA
pF
ns
ns
ns
V
V
S
V
A