GA100NA60UP Vishay Semiconductors, GA100NA60UP Datasheet - Page 7

• Manufacturer Part Number: GA100NA60UP
• Description: Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 50 A
• Manufacturer: Vishay Semiconductors

Document Number: 94543
Revision: 22-Jul-10
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Fig. 17e - Macro Waveforms for Figure 17a's Test Circuit
t0
t1
t2
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V
G
Insulated Gate Bipolar Transistor
Gate signal
device under test
Current D.U.T.
Voltage in D.U.T.
Current in D1
(Warp 2 Speed IGBT), 100 A
Fig. 17d - Test Waveforms for Circuit of Fig. 17a,
V
Diode reverse
recovery energy
pk
I
C
10 % V
tx
I
CC
rr
Defining E
t3
t
rr
rec
, t
rr
, Q
Diode recovery
waveforms
t4
rr
E
, I
rec
10 % I
50 V
rr
0 - 480 V
=
Q
rr
Fig. 18b - Pulsed Collector Current Test Circuit
Fig. 18a - Clamped Inductive Load Test Circuit
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=
rr
t4
V
t3
d
I
t
I
tx
C
rr
C
V
dt
dt
CC
6000 µF
100 V
Vishay Semiconductors
1000 V
GA100NA60UP
L
R
V
L
C
=
*
4 x I
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480 V
C
at 25 °C
D.U.T.
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