GA100NA60UP Vishay Semiconductors, GA100NA60UP Datasheet - Page 3

• Manufacturer Part Number: GA100NA60UP
• Description: Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 50 A
• Manufacturer: Vishay Semiconductors

Document Number: 94543
Revision: 22-Jul-10
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1000
1000
1000
100
100
100
10
10
10
1
1
1
0.0
0.0
5.0
Fig. 2 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics
T = 150 C
J
V
V
V
0.001
1.0
1.0
CE
CE
GE
0.01
0.1
0.00001
6.0
1
?
, Gate-to-Emitter Voltage (V)
T = 25 C
T = 25 C
, Collector-to-Emitter Voltage (V)
, Collector-to-Emitter Voltage (V)
J
J
°
D = 0.50
?
T = 25 C
[e-mail], [e-mail],
0.20
0.10
0.05
0.02
0.01
J
2.0
2.0
°
°
For technical questions within your region, please contact one of the following:
7.0
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction to Case
°
?
V
5μs PULSE WIDTH
V
V
20μs PULSE WIDTH
20μs PULSE WIDTH
3.0
3.0
GE
GE
CC
(THERMAL RESPONSE)
Insulated Gate Bipolar Transistor
= 50V
= 15V
= 15V
0.0001
8.0
SINGLE PULSE
?
T = 150 C
T = 150 C
(Warp 2 Speed IGBT), 100 A
J
J
4.0
4.0
°
°
9.0
5.0
5.0
t , Rectangular Pulse Duration (sec)
1
0.001
0.01
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100
2.5
2.0
1.5
1.0
80
60
40
20
Fig. 4 - Typical Collector to Emitter Voltage vs.
Notes:
1. Duty factor D = t / t
2. Peak T = P
0
-60 -40 -20
25
?
V
80 us PULSE WIDTH
Fig. 3 - Maximum Collector Current vs.
GE
J
= 15V
DM
50
T , Case Temperature ( C)
T , Junction Temperature ( C)
C
J
Vishay Semiconductors
Junction Temperature
x Z
0
1
0.1
Case Temperature
thJC
2
20
P
DM
75
+ T
40
C
t
GA100NA60UP
1
60
t
2
100
80 100 120 140 160
?
I =
?
I =
?
I =
C
C
C
100
°
1
125
50
25
°
A
A
A
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150
3