GA100NA60UP Vishay Semiconductors, GA100NA60UP Datasheet - Page 5

• Manufacturer Part Number: GA100NA60UP
• Description: Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 50 A
• Manufacturer: Vishay Semiconductors

Document Number: 94543
Revision: 22-Jul-10
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1 5 0
1 2 0
Fig. 13 - Typical Reverse Recovery vs. dI
9 0
6 0
3 0
Fig. 12 - Typical Forward Voltage Drop vs.
0
1
0 0
1000
V = 2 00 V
T = 1 2 5°C
T = 2 5 °C
100
10
R
J
J
1
Instantaneous Forward Current
0.0
F orwa rd V oltag e D ro p - V
0.4
di /dt - (A /μ s)
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f
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0.8
1.2
T = 1 5 0 °C
T = 1 2 5 °C
T = 25 °C
Insulated Gate Bipolar Transistor
J
J
J
F M
1.6
(V )
(Warp 2 Speed IGBT), 100 A
I = 100A
I = 50A
I = 25A
F
F
F
2.0
0 1
F
0 0
/dt
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4 0 0 0
3 0 0 0
2 0 0 0
1 0 0 0
1 0 0
Fig. 14 - Typical Recovery Current vs. dI
1 0
1
0
1
Fig. 15 - Typical Stored Charge vs. dI
1
0 0
0 0
V = 2 00 V
T = 1 2 5°C
T = 2 5 °C
V = 2 00 V
T = 1 2 5°C
T = 2 5 °C
R
J
J
R
J
J
I = 50A
I = 100A
I = 25A
I = 100A
I = 50A
I = 25A
F
F
F
F
F
F
Vishay Semiconductors
di /dt - (A /µ s)
di /dt - (A/μ s)
f
f
GA100NA60UP
www.vishay.com
F
0 1
0 1
/dt
F
0 0
/dt
0 0
5