TE28F800C3TA90 Intel, TE28F800C3TA90 Datasheet - Page 5

• Manufacturer Part Number: TE28F800C3TA90
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 512K x 16 90ns 48-Pin TSOP
• Manufacturer: Intel

Specifications of TE28F800C3TA90

• Package: 48TSOP
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Support Of Common Flash Interface: Yes
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Revision History
Datasheet
Revision
05/12/98
07/21/98
10/03/98
12/04/98
12/31/98
02/24/99
06/10/99
03/20/00
04/24/00
10/12/00
10/02/01
Date of
7/20/01
2/05/02
Version
-001
-002
-003
-004
-005
-006
-007
-008
-009
-010
-011
-012
-013
Original version
48-Lead TSOP package diagram change
32-Mbit ordering information change (Section 6)
CFI Query Structure Output Table Change (Table C2)
CFI Primary-Vendor Specific Extended Query Table Change for Optional
Features and Command Support change (Table C8)
Protection Register Address Change
I
Byte-Wide Protection Register Address change
V
V
I
Added Command Sequence Error Note (Table 7)
Datasheet renamed from 3 Volt Advanced Boot Block, 8-, 16-, 32-Mbit Flash
Memory Family.
Added t
Programming the Protection Register clarification (Section 3.4.2)
Removed all references to x8 configurations
Removed reference to 40-Lead TSOP from front page
Added Easy BGA package (Section 1.2)
Removed 1.8 V I/O references
Locking Operations Flowchart changed (Appendix B)
Added t
CFI Primary Vendor-Specific Extended Query changed (Appendix C)
Max I
Table 10, added note indicating V
Added specifications for 0.18 micron product offerings throughout document
Added 64-Mbit density
Changed references of 32Mbit 80ns devices to 70ns devices to reflect the
faster product offering.
Changed VccMax=3.3V reference to indicate that the affected product is the
0.25 m 32Mbit device.
Minor text edits throughout document.
Added 1.8v I/O operation documentation where applicable
Added TSOP PCN ‘Pin-1’ indicator information
Changed references in 8 x 8 BGA pinout diagrams from ‘GND’ to ‘Vssq’
Added ‘Vssq’ to Pin Descriptions Information
Removed 0.4 µm references in DC characteristics table
Corrected 64Mb package Ordering Information from 48-uBGA to 48-VFBGA
Corrected ‘bottom’ parameter block sizes to on 8Mb device to 8 x 4KWords
Minor text edits throughout document
Added specifications for 0.13 micron product offerings throughout document
Corrected Iccw / Ippw / Icces /Ippes values.
Added mechanicals for 16Mb and 64Mb
Minor text edits throughout document.
PPD
CCS
BGA package diagrams change
BGA package top side mark information clarification (Section 6)
IH
IL
Maximum Specification change (Section 4.3)
Specification change (Section 4.3)
test conditions clarification (Section 4.3)
test conditions clarification (Section 4.3)
CCD
BHWH
WHGL
changed to 25 µA
/t
(Section 4.6)
BHEH
and t
QVBL
(Section 4.6)
Description
CC
Max = 3.3 V for 32-Mbit device
Contents
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