TE28F800C3TA90 Intel, TE28F800C3TA90 Datasheet - Page 47

• Manufacturer Part Number: TE28F800C3TA90
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 512K x 16 90ns 48-Pin TSOP
• Manufacturer: Intel

Specifications of TE28F800C3TA90

• Package: 48TSOP
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Support Of Common Flash Interface: Yes
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

8.3
Datasheet
Figure 9. Write Operations Waveform
Table 21. Erase and Program Timings
Erase and Program Timings
Address [A]
t
t
t
t
t
t
t
NOTES:
Data [D/Q]
BWPB
BWMB
WHQV1
WHQV2
WHQV3
WHRH1
WHRH2
1. Typical values measured at T
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
WE# [W]
OE# [G]
CE# [E]
RP# [P]
Vpp [V]
Symbol
/ t
/ t
/ t
/ t
/ t
EHQV1
EHQV2
EHQV3
EHRH1
EHRH2
W1
4-KW Parameter Block
Word Program Time
32-KW Main Block
Word Program Time
Word Program Time for 0.13
and 0.18 Micron Product
Word Program Time for 0.25
Micron Product
4-KW Parameter Block
Erase Time
32-KW Main Block
Erase Time
Program Suspend Latency
Erase Suspend Latency
W2
Parameter
A
= +25 °C and nominal voltages.
W5
W3
W3
Intel
W10
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
£
Note
V
1,3
1,3
Advanced+ Boot Block Flash Memory (C3)
PP
W4
0.10
Typ
0.8
0.5
1.65 V–3.6 V
12
22
1
5
5
Max
0.30
200
200
2.4
10
20
W7
4
5
W6
W8
0.03
0.24
11.4 V–12.6 V
Typ
0.4
0.6
8
8
5
5
W9
W9
Max
0.12
185
185
10
20
1
4
5
Unit
µs
µs
µs
µs
s
s
s
s
47