TE28F800C3TA90 Intel, TE28F800C3TA90 Datasheet - Page 40

• Manufacturer Part Number: TE28F800C3TA90
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 512K x 16 90ns 48-Pin TSOP
• Manufacturer: Intel

Specifications of TE28F800C3TA90

• Package: 48TSOP
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Support Of Common Flash Interface: Yes
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Intel
40
NOTES:
R10
1. OE# may be delayed up to t
2. Sampled, but not 100% tested.
3. See
4. See
R1
R2
R3
R4
R5
R6
R7
R8
R9
#
slew rate.
Table 14. Read Operations—16 Mbit Density
£
Advanced+ Boot Block Flash Memory (C3)
t
Sym
t
t
t
t
t
t
t
t
AVAV
GHQ
AVQ
GLQ
PHQ
GLQ
EHQ
t
ELQ
ELQ
Figure 8, “Read Operation Waveform” on page
Figure 11, “AC Input/Output Reference Waveform” on page 49
OH
V
V
V
V
X
X
Z
Z
Para-
Read Cycle Time
Address to
Output Delay
CE# to Output
Delay
OE# to Output
Delay
RP# to Output
Delay
CE# to Output in
Low Z
OE# to Output in
Low Z
CE# to Output in
High Z
OE# to Output in
High Z
Output Hold from
Address, CE#, or
OE# Change,
Whichever
Occurs First
mete
r
Product
Density
V
CC
ELQV–
2.7 V–3.6 V
Min
70
0
0
0
70 ns
t
GLQV
Max
150
70
70
20
20
20
after the falling edge of CE# without impact on t
2.7 V–3.6 V
Min
80
0
0
0
80 ns
Max
150
80
80
20
20
20
42.
3.0 V–3.6 V
Min
80
0
0
0
Max
150
80
80
30
20
20
16 Mbit
for timing measurements and maximum allowable input
90 ns
2.7 V–3.6 V
Min
90
0
0
0
Max
150
90
90
30
20
20
3.0 V–3.6V 2.7 V–3.6V
Min
100
0
0
0
ELQV
.
Max
100
100
150
30
20
20
110 ns
Min
110
0
0
0
Max
150
110
110
30
20
20
Datasheet
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1,3,4
1,3,4
2,3,4
2,3,4
2,3,4
2,3,4
2,3,4
3,4
3,4
3,4