TE28F800C3TA90 Intel, TE28F800C3TA90 Datasheet - Page 31

• Manufacturer Part Number: TE28F800C3TA90
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 512K x 16 90ns 48-Pin TSOP
• Manufacturer: Intel

Specifications of TE28F800C3TA90

• Package: 48TSOP
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Support Of Common Flash Interface: Yes
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

5.6.1
Datasheet
Figure 7. Example Power Supply Configurations
Program Protection
In addition to the flexible block locking, the V
hardware write protection of all blocks in the flash device. When V
any Program or Erase operation will result in an error, prompting the corresponding status-register
bit (SR[3]) to be set.
NOTE:
1. A resistor can be used if the V
Designing with the Advanced+ Boot Block Flash Memory Architecture for details.
Low Voltage and 12 V Fast Programming
12 V Fast Programming
Absolute Write Protection With V
System Supply
12 V Supply
System Supply
12 V Supply
(Note 1)
10
CC
K
supply can sink adequate current based on resistor value. See AP-657
PP
V
V
V
V
Intel
CC
CC
PP
V
PP
PPLK
PP
£
Advanced+ Boot Block Flash Memory (C3)
programming voltage can be held low for absolute
System Supply
System Supply
Low-Voltage Programming
Absolute Write Protection via Logic Signal
Low-Voltage Programming
Prot#
(Logic Signal)
PP
is below or equal to V
V
V
V
V
CC
PP
CC
PP
PPLK
0645_06
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