TE28F800C3TA90 Intel, TE28F800C3TA90 Datasheet - Page 35

• Manufacturer Part Number: TE28F800C3TA90
• Description: Flash Mem Parallel 3V/3.3V 8M-Bit 512K x 16 90ns 48-Pin TSOP
• Manufacturer: Intel

Specifications of TE28F800C3TA90

• Package: 48TSOP
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 15
• Support Of Common Flash Interface: Yes
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

7.2
7.3
Datasheet
Table 10. Temperature and Voltage Operating Conditions
Table 11. DC Current Characteristics (Sheet 1 of 3)
Operating Conditions
DC Current Characteristics
T
V
V
V
V
V
V
V
Cycling
NOTES:
I
I
LI
LO
1. V
2. V
3. Applying V
Sym
A
CC1
CC2
CCQ1
CCQ2
CCQ3
PP1
PP2
Symbol
the main blocks and 2500 cycles on the parameter blocks. V
80 hours maximum.
CC
CC
Max = 3.3 V for 0.25 m 32-Mbit devices.
and V
Input Load Current
Output Leakage
Current
CCQ
PP
Operating Temperature
V
I/O Supply Voltage
Supply Voltage
Block Erase Cycling
Parameter
CC
= 11.4 V–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on
must share the same supply when they are in the V
Supply Voltage
Parameter
V
Note
V
1,2
1,2
CCQ
CC
2.7 V–3.6 V
2.7 V–3.6 V
Typ
Intel
Max
£
10
Advanced+ Boot Block Flash Memory (C3)
1
Notes
1, 2
1, 2
1, 3
2.7 V–2.85 V
1.65 V–2.5 V
Typ
1
1
3
PP
may be connected to 12 V for a total of
Max
10
1
100,000
CC1
1.65
1.65
11.4
Min
–40
2.7
3.0
2.7
1.8
range.
2.7 V–3.3 V
1.8 V–2.5 V
Typ
Max
10
1
Max
12.6
+85
3.6
3.6
3.6
2.5
2.5
3.6
Unit
µA
µA
Conditions
V
V
V
V
V
or GND
V
V
V
V
V
or GND
CC
CC
CCQ
CCQ
IN
CC
CC
CCQ
CCQ
IN
Cycles
Units
Volts
Volts
Volts
Volts
Test
= V
= V
°C
Max
Max
=
=
Max
Max
=
=
CCQ
CCQ
35