PSMN006-20K NXP Semiconductors, PSMN006-20K Datasheet - Page 8

• Manufacturer Part Number: PSMN006-20K
• Description: SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PSMN006-20K

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.005Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±10V
• Continuous Drain Current: 32A
• Power Dissipation: 8.3W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PSMN006-20K_1
Product data sheet
Fig 13. Source current as a function of source-drain voltage; typical values
(A)
I
S
30
20
10
0
0
V
GS
= 0 V
Rev. 01 — 17 November 2009
0.2
T
j
= 150 ° C
0.4
N-channel TrenchMOS SiliconMAX ultra low level FET
0.6
0.8
25 ° C
V
SD
03ai67
(V)
1
PSMN006-20K
© NXP B.V. 2009. All rights reserved.
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