PSMN006-20K NXP Semiconductors, PSMN006-20K Datasheet - Page 4

• Manufacturer Part Number: PSMN006-20K
• Description: SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PSMN006-20K

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.005Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±10V
• Continuous Drain Current: 32A
• Power Dissipation: 8.3W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN006-20K_1
Product data sheet
Symbol
R
Fig 4.
th(j-sp)
Z
(K/W)
th(j-sp)
10
10
10
−1
1
2
10
Transient thermal impedance from junction to solder point as a function of pulse duration
−4
Thermal characteristics
δ = 0.5
0.2
0.1
0.05
0.02
Parameter
thermal resistance from
junction to solder point
single pulse
10
−3
Conditions
mounted on a metal clad board;
see
Figure 4
10
−2
Rev. 01 — 17 November 2009
N-channel TrenchMOS SiliconMAX ultra low level FET
10
−1
1
Min
-
PSMN006-20K
10
P
Typ
-
t
p
t
T
p
© NXP B.V. 2009. All rights reserved.
(s)
Max
15
δ =
03ai62
T
t
t
p
10
2
Unit
K/W
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