PSMN006-20K NXP Semiconductors, PSMN006-20K Datasheet - Page 3

• Manufacturer Part Number: PSMN006-20K
• Description: SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PSMN006-20K

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.005Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±10V
• Continuous Drain Current: 32A
• Power Dissipation: 8.3W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PSMN006-20K_1
Product data sheet
Fig 1.
Fig 3.
(%)
I
(A)
der
I
10
D
120
10
80
40
10
−1
0
1
2
10
function of solder point temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
−1
Limit R
DSon
50
= V
DS
/I
D
100
150
T
sp
1
03aa25
(°C)
Rev. 01 — 17 November 2009
DC
200
N-channel TrenchMOS SiliconMAX ultra low level FET
Fig 2.
P
(%)
der
120
80
40
0
function of solder point temperature
Normalized total power dissipation as a
0
10
50
PSMN006-20K
t
1 ms
10 ms
100 ms
p
100
= 10 µs
V
DS
(V)
150
© NXP B.V. 2009. All rights reserved.
T
sp
03aa17
(°C)
03ai63
200
10
2
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