PSMN006-20K NXP Semiconductors, PSMN006-20K Datasheet - Page 6

• Manufacturer Part Number: PSMN006-20K
• Description: SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PSMN006-20K

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.005Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±10V
• Continuous Drain Current: 32A
• Power Dissipation: 8.3W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PSMN006-20K_1
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
10
10
10
10
10
10
I
D
30
20
10
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
0.2
0.05
0.4
min
0.1
4.5 V
0.6
2.5 V
0.15
2 V
typ
0.8
V
V
GS
V
DS
GS
1.5 V
1.3 V
1.1 V
= 1 V
03ai64
03ai70
(V)
Rev. 01 — 17 November 2009
(V)
0.2
1
N-channel TrenchMOS SiliconMAX ultra low level FET
Fig 6.
Fig 8.
V
GS(th)
(V)
(A)
0.8
0.6
0.4
0.2
I
D
30
20
10
1
0
0
−80
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
Gate-source threshold voltage as a function of
0
V
DS
> I
D
0.4
x R
T j = 150 ° C
DSon
0
PSMN006-20K
typ
min
0.8
80
25 ° C
1.2
© NXP B.V. 2009. All rights reserved.
T
V
j
( ° C)
GS
03ai71
03ai66
(V)
160
1.6
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