PSMN006-20K NXP Semiconductors, PSMN006-20K Datasheet - Page 10

• Manufacturer Part Number: PSMN006-20K
• Description: SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PSMN006-20K

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.005Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±10V
• Continuous Drain Current: 32A
• Power Dissipation: 8.3W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
8. Revision history
Table 7.
PSMN006-20K_1
Product data sheet
Document ID
PSMN006-20K_1
Revision history
Release date
20091117
Data sheet status
Product data sheet
Rev. 01 — 17 November 2009
N-channel TrenchMOS SiliconMAX ultra low level FET
Change notice
-
PSMN006-20K
Supersedes
-
© NXP B.V. 2009. All rights reserved.
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